D1850
DESCRIPTION
- High Voltage
- High Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCES VCEO VEBO
PARAMETER i.cn Collector-Base Voltage .iscsem Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE UNIT
700 V
7V
IC Collector Current-Continuous
7A
ICP Collector Current-Peak
20 A
IBB Base Current- Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
Tj Junction Temperature
3A
3 W
150 ℃
Tstg Storage Temperature Range
-55-150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor
.. isc Silicon NPN Power Transistor isc Product Specification
2SD1850
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC=...
