Datasheet4U Logo Datasheet4U.com

D1918 - Silicon NPN Power Transistor

General Description

Suitable for middle power drivers High voltage:VCEO=160V Complementary PNP types:2SB1275 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATING

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D1918 2SD1918 Rohm
D1910 2SD1910 Wing Shing Electronic
D1911 2SD1911 Wing Shing Computer Components
D1913 2SD1913 Sanyo Semicon Device
D1902 2SD1902 Sanyo

Other Datasheets by Inchange Semiconductor

Part Number Description
D1912 2SD1912
D1980 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementary PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.