D1918
D1918 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Suitable for middle power drivers
- High voltage:VCEO=160V
- plementary PNP types:2SB1275
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 1.5 A
ICM Collector Current-Peak
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
3.0 A 10 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base breakdown...
