Datasheet Details
| Part number | D1918 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.14 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D1918-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918.
| Part number | D1918 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 223.14 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | D1918-InchangeSemiconductor.pdf |
|
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·Suitable for middle power drivers ·High voltage:VCEO=160V ·plementary PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=50uA BV
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D1918 | 2SD1918 | Rohm |
| Part Number | Description |
|---|---|
| D1912 | 2SD1912 |
| D1980 | Silicon NPN Power Transistor |