D2027
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- Good Linearity of h FE
- Wide Area of Safe Operation
- plement to Type 2SB1346
APPLICATIONS
- Designed for low frequency and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cn SYMBOL
PARAMETER
VALUE
UNIT
.iscsem VCBO
Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
8A
1.75 W
150 ℃
-55~150
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor
.. isc Silicon NPN Power Transistor isc Product Specification
2SD2027
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
