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D2027 - 2SD2027

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1346 APPLICATIONS

amplifier applications.

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V wwwVEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 8A 1.75 W 30 150 ℃ -55~150 ℃ isc Website：www.iscsemi.