Datasheet Details
| Part number | D2027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.99 KB |
| Description | 2SD2027 |
| Datasheet | D2027-InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product.
| Part number | D2027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.99 KB |
| Description | 2SD2027 |
| Datasheet | D2027-InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V wwwVEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 8A 1.75 W 30 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Part Number | Description |
|---|---|
| D209L | Silicon NPN Power Transistor |