D2027 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1346 APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. isc Silicon NPN Power Transistor isc Product Specification 2SD2027 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.