D209L Description
·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V;.
| Manufacturer | Part Number | Description |
|---|---|---|
Jilin Sino |
D209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
ATE |
D209L | NPN Transistor |
| ETC Unknown Manufacturer |
D209L | Low-frequency amplification shell rated bipolar transistors |
Winsemi |
D209L | High Voltage Fast Switching NPN Power Transistor |
ROHM |
D2091 | 2SD2091 |
·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V;.