D209L Overview
·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V;.
D209L datasheet by Inchange Semiconductor.
| Part number | D209L |
|---|---|
| Datasheet | D209L-InchangeSemiconductor.pdf |
| File Size | 198.23 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·High Collector-Emitter Breakdown Voltage- : IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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D209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | Jilin Sino |
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D209L | NPN Transistor | ATE |
| ETC | D209L | Low-frequency amplification shell rated bipolar transistors | ETC |
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D209L | High Voltage Fast Switching NPN Power Transistor | Winsemi |
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D2091 | 2SD2091 | Rohm |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| D2027 | 2SD2027 |