D209L - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability isc Product Specification D209L APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIM

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Datasheet Details

Part number	D209L
Manufacturer	Inchange Semiconductor
File Size	198.23 KB
Description	Silicon NPN Power Transistor
Datasheet	D209L Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.