D2236 - 2SD2236

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) Wide Area of Safe Operation Complement to Type 2SB1477 APPLICATIONS

Designed for driver and general purpose applications.

Inchange Semiconductor

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Datasheet Details

Part number	D2236
Manufacturer	Inchange Semiconductor
File Size	241.08 KB
Description	2SD2236
Datasheet	D2236 Datasheet
Additional preview pages of the D2236 datasheet.

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 5A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.

Published: Jan 13, 2015 |