D2562
D2562 is 2SD2562 manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
- High DC Current Gain-
: h FE= 5000( Min.) @(IC= 10A, VCE= 4V)
- Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10m A)
- plement to Type 2SB1649
APPLICATIONS
- Designed for series regulator and general purpose applications.
.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
15 A
IB Base Current-Continuous Collector Power Dissipation
PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature
1A 85 W 150 ℃ -55~150 ℃ isc Website：.iscsemi.cn
.Data Sheet.in
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification
2SD2562
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30m A, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 10m A
2.5...
