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D2562 - 2SD2562

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) Complement to Type 2SB1649 APPLICATIONS Designed for series regulator and g

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·Designed for series regulator and general purpose applications. .iscsemi.