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D363 - 2SD363

Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

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    INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ 6 A PC 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn htp:/w.BDTIC.com Free Datasheet http://www.datasheet4u.
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