D363 - 2SD363

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS

Designed for B/W TV horizontal deflection output applications.

📥 Download Datasheet

D363 2sd363 by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	D363
Manufacturer	Inchange Semiconductor
File Size	116.85 KB
Description	2SD363
Datasheet	D363 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
D360SC4M	Schottky Barrier Diodes	Shindengen
D360SC6M	Schottky Barrier Diodes	Shindengen
D362	2SD362	SavantIC
D36NH02L	STD36NH02L	STMicroelectronics
D36V0S1U2LP1610Q	ONE CHANNEL HIGH SURGE TVS DIODE	DIODES

Other Datasheets by Inchange Semiconductor

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector Power Dissipation: PC= 40W(Max)@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ 6 A PC 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn htp:/w.BDTIC.com Free Datasheet http://www.datasheet4u.