Datasheet Details
| Part number | D428 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 109.80 KB |
| Description | 2SD428 |
| Datasheet | D428-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product.
| Part number | D428 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 109.80 KB |
| Description | 2SD428 |
| Datasheet | D428-InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·plement to Type 2SB558 APPLICATIONS ·Designed for power amplifier applications.
·Remended for 40W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 .DataSheet.co.kr V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 7A IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature -7 A 60 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：.iscsemi.cn Datasheet pdf - http://..net/ INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD428 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A;
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