Datasheet Details
| Part number | D5011 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.76 KB |
| Description | 2SD5011 |
| Datasheet | D5011_InchangeSemiconductor.pdf |
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Overview: .DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | D5011 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.76 KB |
| Description | 2SD5011 |
| Datasheet | D5011_InchangeSemiconductor.pdf |
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·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3.5 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：.iscsemi.cn Datasheet pdf - http://..net/ .DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5011 TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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D5011UK | METAL GATE RF SILICON FET | Seme LAB |
| Part Number | Description |
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