D649
DESCRIPTION
- High Breakdown Voltage: VCBO= 1500V (Min)
- High Reliability
APPLICATIONS
- Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
C ..
Collector Current- Continuous w w s c s i . w
1500 1500 5 3 5 35
V n c . i m e
Collector Current-Pulse
Collector Power Dissipation @ TC≤90℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~130
℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN...
