Datasheet4U Logo Datasheet4U.com

FDP19N40 - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 19A@ TC=25℃.
  • Drain Source Voltage : VDSS= 240V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP19N40 N-Channel MOSFET Fairchild Semiconductor
FDP100N10 MOSFET Fairchild Semiconductor
FDP100N10 N-Channel MOSFET INCHANGE
FDP10AN06A0 N-Channel MOSFET Fairchild Semiconductor
FDP10N50F MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FDP038AN06A0 N-Channel MOSFET Transistor
FDP33N25 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FDP19N40 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 240V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pluse 76 A PD Total Dissipation @TC=25℃ 215 W TJ Max.