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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRK260
DESCRIPTION ·46A, 200V, RDS(on) = 0.07Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
200 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃ 46 A
Total Dissipation@TC=25℃
300 W
Max.
FRK260 Datasheet
