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FRM140 - N-Channel MOSFET Transistor

General Description

23A, 100V, RDS(on) = 0.13Ω

APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification FRM140 DESCRIPTION ·23A, 100V, RDS(on) = 0.13Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 100 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 23 A Total Dissipation@TC=25℃ 125 W Max.