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isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
FRM240
·FEATURES ·16A, 200V, RDS(on) = 0.24Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate
(GAMMA DOT) exposure.
FRM240 Datasheet
