GT43 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 2000(Min.)@ IC= 4A ·Low Collector Saturation Voltage.
GT43 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 2000(Min.)@ IC= 4A ·Low Collector Saturation Voltage.