GT43 - Silicon NPN Darlington Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High DC Current Gain : hFE= 2000(Min.)@ IC= 4A Low Collector Saturation Voltage : VCE(sat)= 3.0V(Max.)@ IC= 6A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switchin

📥 Download Datasheet

GT43 silicon npn darlington power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	GT43
Manufacturer	Inchange Semiconductor
File Size	195.79 KB
Description	Silicon NPN Darlington Power Transistor
Datasheet	GT43 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
GT400P10	P-Channel Enhancement Mode Power MOSFET	GOFORD
GT400P10T	P-Channel Enhancement Mode Power MOSFET	GOFORD
GT4050D	Photovoltaic bypass module diode	GREATEEN
GT40G121	Silicon N-Channel IGBT	Toshiba Semiconductor
GT40J121	Silicon N-Channel IGBT	Toshiba

Other Datasheets by Inchange Semiconductor

Part Number	Description

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 2000(Min.)@ IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 3.0V(Max.

Published: Jul 29, 2016 |