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HG2N60 - N-Channel Mosfet Transistor

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Inchange Semiconductor

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HG2N60 N-Channel Mosfet Transistor by Inchange Semiconductor - Datasheet Preview — Datasheet preview – HG2N60

Datasheet Details

Part number	HG2N60
Manufacturer	Inchange Semiconductor
File Size	132.03 KB
Description	N-Channel Mosfet Transistor
Datasheet	HG2N60 Datasheet
Additional preview pages of the HG2N60 datasheet.

Product details

Features

Drain Current.
ID= 2A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.

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Published: Nov 6, 2016 |