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IRF233 Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.

General Description

·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.6Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·Motor controls,converters and solenoid driver ·High energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 75 W Max.

Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

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