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IRF251 - N-Channel MOSFET Transistor

General Description

Drain Current ID=30A@ TC=25℃ Drain Source Voltage- : VDSS= 150V(Min) Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) Nanosecond Switching Speed APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATIN

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF251 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 150 ±20 V V Drain Current-continuous@ TC=25℃ 30 A Total Dissipation@TC=25℃ 150 W Max.