Datasheet4U Logo Datasheet4U.com

IRF252 - N-Channel MOSFET Transistor

General Description

Drain Current ID=25A@ TC=25℃ Drain Source Voltage : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max) Nanosecond Switching Speed APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF252 N-Channel Power MOSFET Samsung semiconductor
IRF250 N-Channel Power MOSFET Samsung semiconductor
IRF250 N-Channel Power MOSFET Seme LAB
IRF250 N-Channel Power MOSFET Intersil Corporation
IRF250 HEXFET TRANSISTORS International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF250 N-Channel MOSFET Transistor
IRF251 N-Channel MOSFET Transistor
IRF253 N-Channel MOSFET Transistor
IRF254 N-Channel MOSFET Transistor
IRF255 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF252 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 200 ±20 V V Drain Current-continuous@ TC=25℃ 25 A Total Dissipation@TC=25℃ 150 W Max.