IRF331
IRF331 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- VGS Rated at ±20V
- Silicon Gate for Fast Switching Speeds
- IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature
- Rugged
APPLICATIONS
- Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
350 ±20
Drain Current-continuous@ TC=25℃ 5.5 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-A
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
1.67 30
℃/W ℃/W isc website：.iscsemi.cn
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25m A
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25m A
RDS(ON)
Drain-Source...
