IRF342
IRF342 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- VGS Rated at ±20V
- Silicon Gate for Fast Switching Speeds
- IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature
- Rugged
APPLICATIONS
- Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
400 ±20
Drain Current-continuous@ TC=25℃ 8.3 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification
- ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25m A
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25m A
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A
IGSS Gate Source Leakage...
