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IRF360 - N-Channel MOSFET Transistor

General Description

silicon Gate for fast switching at elevate rugged APPLICATIONS

Switching power supplies,motor controls ,inverters, Choppers,audio amplifiers and high energy pulse circuits.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF360 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 25 A Total Dissipation@TC=25℃ 300 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.