Datasheet4U Logo Datasheet4U.com

IRF520FI - N-Channel MOSFET Transistor

Key Features

  • Typical RDS(on) =0.23Ω.
  • Avalanche Rugged Technology.
  • High Current Capability.
  • Low Gate Charge.
  • 175℃ Operating Temperature.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF520FI N-Channel Power MOSFET STMicroelectronics
IRF520 N-Channel Power MOSFET STMicroelectronics
IRF520 N-Channel Power MOSFET Supertex Inc
IRF520 N-Channel Power MOSFET Intersil Corporation
IRF520 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF522 N-Channel MOSFET Transistor
IRF523 N-Channel MOSFET Transistor
IRF510 N-Channel MOSFET Transistor
IRF511 N-Channel MOSFET Transistor
IRF512 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520FI ·FEATURES ·Typical RDS(on) =0.23Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control ,Audio Amplifiers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 35 W Tj Max.