IRF650A
FEATURES
- Low RDS(on) = 0.073Ω(TYP)
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Rugged Gate Oxide Technology
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
200 ±30
28 A
112 A
156 W
-55~150 -55~150
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 0.8 62.5
UNIT ℃/W ℃/W isc website：.iscsemi.cn
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
