Datasheet4U Logo Datasheet4U.com

IRF822FI - N-Channel MOSFET Transistor

General Description

purpose applications.

Key Features

  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Rugged Gate Oxide Technology.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF822FI (IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors STMicroelectronics
IRF822 N-Channel Power MOSFET ART CHIP
IRF822 N-Channel Power MOSFET Fairchild Semiconductor
IRF822 N-Channel Power MOSFET Samsung semiconductor
IRF822 (IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
IRF822 N-Channel MOSFET Transistor
IRF820 N-Channel MOSFET Transistor
IRF821 N-Channel MOSFET Transistor
IRF823 N-Channel MOSFET Transistor
IRF830 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF822FI FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 1.9 A IDM Drain Current-Single Pluse 7.6 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.