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IRFP150A Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150A.

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 43 A IDM Drain Current-Single Pluse 170 A PD Total Dissipation @TC=25℃ 193 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.7 30 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Key Features

  • Drain Current.
  • ID= 43A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max).
  • Fast Switching.
  • 100% tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IRFP150A Distributor