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IRFP255 - N-Channel MOSFET Transistor

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 21A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 250V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFP255

Datasheet Details

Part number IRFP255
Manufacturer Inchange Semiconductor
File Size 236.38 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet IRFP255 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFP255 FEATURES ·Drain Current –ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.17Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Pluse 84 A PD Total Dissipation @TC=25℃ 180 W TJ Max.
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