IRFS440A - N-Channel MOSFET

Inchange Semiconductor

General Description

purpose applications.

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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IRFS440A n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFS440A
Manufacturer	Inchange Semiconductor
File Size	237.56 KB
Description	N-Channel MOSFET
Datasheet	IRFS440A Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±30 V 6.