Download IRFS440A Datasheet PDF
Inchange Semiconductor
IRFS440A
FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT ±30 -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 1.46 40 UNIT ℃/W ℃/W IRFS440A isc website:.iscsemi....