IRFS620A - N-Channel MOSFET Transistor

Inchange Semiconductor

General Description

purpose applications.

16.

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.

📥 Download Datasheet

IRFS620A n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRFS620A
Manufacturer	Inchange Semiconductor
File Size	53.20 KB
Description	N-Channel MOSFET Transistor
Datasheet	IRFS620A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRFS620A	Power MOSFET	Fairchild Semiconductor
IRFS620B	200V N-Channel MOSFET	Fairchild
IRFS624B	250V N-Channel MOSFET	Fairchild
IRFS610A	Power MOSFET	Fairchild Semiconductor
IRFS610B	200V N-Channel MOSFET	Fairchild

Other Datasheets by Inchange Semiconductor

Part Number	Description
IRFS624A	N-Channel MOSFET Transistor
IRFS610A	N-Channel MOSFET
IRFS630A	N-Channel MOSFET Transistor
IRFS634A	N-Channel MOSFET Transistor
IRFS640A	N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS620A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 4.1 A IDM Drain Current-Single Pluse 16.4 A PD Total Dissipation @TC=25℃ 32 W TJ Max.