Datasheet4U Logo Datasheet4U.com

ISCI365W - Thyristors

General Description

With TO-247 packaging Long-term stability Thyristor for line frequency Planar passivated chip Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ISC-1008 Surface Mount Wirewound Shielded Inductor Vishay Siliconix
ISC-1210 Shielded Inductors Vishay Siliconix
ISC-1812 Shielded Inductors Vishay Siliconix
ISC007N04NM6 40V MOSFET Infineon
ISC009N03LF2S 30V MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
ISC60NM60L N-Channel MOSFET Transistor
ISCD3NK80Z N-Channel MOSFET Transistor
ISCNH060D N-Channel MOSFET Transistor
ISCNH370W N-Channel MOSFET Transistor
ISCNH371D N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Thyristors ISCI365W DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM PG(AV) Tj Tstg Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave ) Average gate power dissipation Operating junction temperature Storage temperature MIN 1600 1600 55 520 1.