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ISCNH373F - N-Channel MOSFET Transistor

Key Features

  • Drain Current.
  • ID= 3.0A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 1500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ISCNH373F FEATURES ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ·Switching regulator, DC-DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 3.0 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 45 W Tj Max.