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isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- VDSS: 1500V(Min) ·Static Drain-Source On-Resistance RDS(on): <7.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High speed power switching ·Switching regulator, DC-DC converter
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Pulsed
9
A
PD
Total Dissipation @TC=25℃
250
W
Tj
Max. Operating Junction Temperature 150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
0.
ISH3N150 Datasheet
