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IXFY26N30X3 Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor IXFY26N30X3.

General Description

·motor drive, DC-DC converter, power switch and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 170 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.73 UNIT ℃/W isc website：.iscsemi.

Key Features

  • Drain Current : ID= 26A@ TC=25℃.
  • Drain Source Voltage : VDSS= 300V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXFY26N30X3 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
IXYS Logo IXFY26N30X3 Power MOSFET IXYS

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IXFY26N30X3 Distributor