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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1378
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=400V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
400 ±30
Drain Current-continuous@ TC=25℃
10
Total Dissipation@TC=25℃
125
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
2.77 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website:www.iscsemi.