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KSA614 - Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V (Max.)@ IC= -1A Collector Power Dissipation- : PC= 25W@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor KSA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ·Power regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.