KSC5022 Description
·Collector-Emitter Breakdown Voltage- : Clamped V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.
KSC5022 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| KSC5022 | NPN Epitaxial Silicon Transistor |
·Collector-Emitter Breakdown Voltage- : Clamped V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.