KSC5022 Overview
·Collector-Emitter Breakdown Voltage- : Clamped V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.
KSC5022 datasheet by Inchange Semiconductor.
| Part number | KSC5022 |
|---|---|
| Datasheet | KSC5022-InchangeSemiconductor.pdf |
| File Size | 208.35 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : Clamped V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| KSC5022 | NPN Epitaxial Silicon Transistor | Samsung semiconductor |
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