Datasheet Details
| Part number | KSC5022 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSC5022-InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | KSC5022 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSC5022-InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 60 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5022 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A ;
IB1= -IB2= 0.6A, L= 1mH;
Clamped V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSC5022 | NPN Epitaxial Silicon Transistor | Samsung semiconductor |
| Part Number | Description |
|---|---|
| KSC5023 | Silicon NPN Power Transistor |
| KSC5024 | Silicon NPN Power Transistor |
| KSC5025 | Silicon NPN Power Transistor |
| KSC5026 | Silicon NPN Power Transistor |
| KSC5028 | Silicon NPN Power Transistor |
| KSC5029 | Silicon NPN Power Transistor |
| KSC5030 | Silicon NPN Power Transistor |