KSC5022
KSC5022 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
- High Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Switching regulators
- General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous 4 A
ICM Collector Current-Peak
8A
IB Base Current-Continuous
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
60 W 150 ℃
-55~150
℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
