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KSC5023 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS

applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5023 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 7A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3A 80 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.