Datasheet Details
| Part number | KSC5024 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.81 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSC5024-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | KSC5024 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.81 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSC5024-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3A 90 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5024 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEX(SUS) Collector-Emitter Sustaining Voltage V(BR)CBO Collector-Base Breakdown Voltage CONDITIONS IC= 3.5A ;IB1= -IB2= 1.4A;
L= 500μH,Clamped IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSC5024 | NPN Epitaxial Silicon Transistor | Samsung semiconductor |
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KSC5024 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| KSC5022 | Silicon NPN Power Transistor |
| KSC5023 | Silicon NPN Power Transistor |
| KSC5025 | Silicon NPN Power Transistor |
| KSC5026 | Silicon NPN Power Transistor |
| KSC5028 | Silicon NPN Power Transistor |
| KSC5029 | Silicon NPN Power Transistor |
| KSC5030 | Silicon NPN Power Transistor |