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KSC5025 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 4A 100 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5025 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEX(SUS) Collector-Emitter Sustaining Voltage V(BR)CBO Collector-Base Breakdown Voltage CONDITIONS IC= 5A ;IB1= -IB2= 2A;

L= 500μH,Clamped IC= 1mA;

KSC5025 Distributor