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KSC5029 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS

applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5029 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4.5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 90 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.