Datasheet Details
| Part number | KSC5029 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.09 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSC5029-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | KSC5029 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.09 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSC5029-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4.5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 90 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5029 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEX(SUS) Collector-Emitter Sustaining Voltage V(BR)CBO Collector-Base Breakdown Voltage CONDITIONS IC= 2A ;IB1= -IB2= 0.4A;
L= 2mH,Clamped IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KSC5029 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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| KSC5028 | Silicon NPN Power Transistor |
| KSC5030 | Silicon NPN Power Transistor |