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KSD288 - Silicon NPN Power Transistor

General Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min) Collector Current- IC= 3A Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS Power regulator Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD288 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min) ·Collector Current- IC= 3A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS ·Power regulator ·Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.