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KSD288 - Silicon NPN Power Transistor

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Part number KSD288
Manufacturer Inchange Semiconductor
File Size 134.96 KB
Description Silicon NPN Power Transistor
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Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min) Collector Current- IC= 3A Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS Power regulator Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 25 W

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