KSD5080 Description
·High Breakdown Voltage- : IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 800V.
- Part: KSD5080
- Manufacturer: Inchange Semiconductor (official site)
- Size: 131.80 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
NJS |
KSD5080 | Silicon NPN Power Transistor |