KSD568
KSD568 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector Current:: IC= 7A
- Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 5A
- plement to Type KSB707
APPLICATIONS
- Designed for low-frequency power amplifiers and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
7V 7A
ICM Collector Current-Peak
15 A
IB Base Current-Continuous
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ Junction Temperature
3.5 A
40 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10m A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=...
