Datasheet Details
| Part number | KSD568 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.78 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSD568-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | KSD568 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 135.78 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | KSD568-InchangeSemiconductor.pdf |
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·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·plement to Type KSB707 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 7A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD568 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSD568 | Low Frequency Power Amplifier | Fairchild Semiconductor |
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