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KSD794 - Silicon NPN Power Transistor

General Description

High Collector Current -IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) Complement to Type KSB744 APPLICATIONS

Designed for use in audio frequency amplifier.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD794 DESCRIPTION ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type KSB744 APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 3A ICP Collector Current-Pulse 5A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.6 A 10 W 1 150 ℃ -55~150 ℃ isc website：www.iscsemi.