Datasheet Details
| Part number | KT863A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.19 KB |
| Description | Silicon NPN Power Transistors |
| Download | KT863A Download (PDF) |
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| Part number | KT863A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.19 KB |
| Description | Silicon NPN Power Transistors |
| Download | KT863A Download (PDF) |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=5A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
isc Silicon NPN Power Transistors KT863A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| SIT | KT863 | Silicic epitaxial planar NPN TRANSISTOR | SIT |
| ETC | KT863B | NPN Transistor | ETC |
| SIT | KT863BS | Silicic epitaxial planar NPN TRANSISTOR | SIT |
| Part Number | Description |
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