KTA1659
DESCRIPTION
- High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min)
- plement to Type KTC4370
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
VCEO
Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-5.0
IC(DC)
Collector Current(DC)
-1.5
IB(DC) PC TJ
Base Current
Collector Power Dissipation @TC=25℃
Junction Temperature
-0.15
℃
Tstg
Storage Temperature
-55~150 ℃
KTA1659 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power...
