Datasheet Details
| Part number | KTA1659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.32 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | KTA1659-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KTA1659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.32 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | KTA1659-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·plement to Type KTC4370 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1659 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTA1659 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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KTA1659A | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
| Part Number | Description |
|---|---|
| KTA1659A | Silicon PNP Power Transistors |
| KTA1042D | Silicon PNP Power Transistors |
| KTA1700 | Silicon PNP Power Transistors |
| KTA1962 | Silicon PNP Power Transistors |