Datasheet Details
| Part number | KTA1962 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.08 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | KTA1962-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | KTA1962 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.08 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | KTA1962-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·plement to Type KTC5242 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Remend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTA1962 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA1962 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTA1962 | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
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KTA1962A | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
| Part Number | Description |
|---|---|
| KTA1042D | Silicon PNP Power Transistors |
| KTA1659 | Silicon PNP Power Transistors |
| KTA1659A | Silicon PNP Power Transistors |
| KTA1700 | Silicon PNP Power Transistors |