KTC4370 - Silicon NPN Power Transistors

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) Complement to Type KTA1659 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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Datasheet Details

Part number	KTC4370
Manufacturer	Inchange Semiconductor
File Size	217.93 KB
Description	Silicon NPN Power Transistors
Datasheet	KTC4370 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTC4370 isc website： www.iscsemi.