Datasheet Details
| Part number | KTC4370 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.93 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTC4370-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | KTC4370 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.93 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTC4370-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTC4370 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KTC4370 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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KTC4370A | NPN Transistors | Kexin |
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KTC4370A | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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