Datasheet Details
| Part number | KTC4419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.24 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTC4419-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor KTC4419.
| Part number | KTC4419 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.24 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | KTC4419-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
KTC4419 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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