KTD1510 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain.
KTD1510 datasheet by Inchange Semiconductor.
| Part number | KTD1510 |
|---|---|
| Datasheet | KTD1510-InchangeSemiconductor.pdf |
| File Size | 146.13 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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