KTD1510 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain.
KTD1510 is Silicon NPN Power Transistors manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
KEC |
KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain.