KTD1510 - Silicon NPN Power Transistors

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V Complement to Type KTB2510 APPLICATIONS High power amplifier applications Recommended

📥 Download Datasheet

KTD1510 silicon npn power transistors by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	KTD1510
Manufacturer	Inchange Semiconductor
File Size	146.13 KB
Description	Silicon NPN Power Transistors
Datasheet	KTD1510 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
KTD1510	EPITAXIAL PLANAR NPN TRANSISTOR	KEC
KTD1555	Transistor	Korea Electronics
KTD1003	EPITAXIAL PLANAR NPN TRANSISTOR	KEC
KTD101B105M32A0T00	DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS	NIPPON CHEMI-CON
KTD101B106M80A0B00	DIPPED RADIAL LEAD MULTILAYER CERAMIC CAPACITORS	NIPPON CHEMI-CON

Other Datasheets by Inchange Semiconductor

Part Number	Description
KTD1414	Silicon NPN Power Transistors
KTD1945	Silicon NPN Power Transistors
KTD2058	Silicon NPN Power Transistors
KTD2059	Silicon NPN Power Transistors
KTD2060	Silicon NPN Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.